010345

     

SPIE Advanced Lithography
San Jose, California
Feb 27-Mar 4, 2011
 
 

SEMICON Japan
Chiba, Japan
Dec 1-3, 2010
 
 

International Symposium on Lithography Extensions
Kobe, Japan
Oct 20-22, 2010
 
 

SPIE Photomask / BACUS
Monterey, California
Sep 13-16, 2010
 
 

SEMICON West
Moscone Center San Francisco, California
Jul 13-15, 2010
 
 

EIPBN Conference
Anchorage, Alaska
Jun 1-4, 2010
 
     
 
   
  About Multibeam Corporation
 

News
 

Multibeam owns substantial IP in electron optics technology IP with 22 patents filed, 12 issued.
 

Multibeam’s e-beam column technology is optimized for low cost and high performance. Multi-column arrays are built of identical e-beam columns. The e-beam column array is extremely fast, making it a viable solution to the challenges facing the semiconductor industry at the 22nm node and below.
 

Multibeam is building its revolutionary e-beam column as a complement to optical lithography for high-volume manufacturing of critical IC layers, low-volume production of ASICs, wafer defect inspection and other applications.

E-Beam Technology Background
 

Almost all commercially available e-beam systems today are derived from SEM technology first developed in 1935.  In the 1970s and 1980s, E-Beam Direct Write (EBDW) was used to produce ICs for mainframe computers.  For the past 25 years, e-beam systems have been used to pattern photomasks for optical lithography. 

 

Until now, all e-beam systems have faced the same challenge: they are all based on single e-beam column technology and are all too slow to be used for high volume manufacturing.

  

Multibeam Corp. technology represents a new generation of e-beam technology. Our proprietary multi-column e-beam technology is orders of magnitude faster than single beam technology.