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SPIE Advanced Lithography
San Jose, California
Feb 27-Mar 4, 2011
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SEMICON Japan
Chiba, Japan
Dec 1-3, 2010
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International Symposium on Lithography Extensions
Kobe, Japan
Oct 20-22, 2010
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SPIE Photomask / BACUS
Monterey, California
Sep 13-16, 2010
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SEMICON West
Moscone Center San Francisco,
California
Jul 13-15, 2010
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EIPBN Conference
Anchorage, Alaska
Jun 1-4, 2010 |
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About
Multibeam Corporation |
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Multibeam
owns substantial IP in electron optics technology IP with 22 patents filed, 12 issued.
Multibeam’s
e-beam column technology is optimized for low cost and high
performance. Multi-column arrays are built of identical e-beam columns.
The e-beam column array
is extremely fast, making it a viable solution to the challenges facing
the semiconductor industry at the 22nm node and below.
Multibeam
is building its revolutionary e-beam column as a complement to optical lithography for high-volume
manufacturing of critical IC layers, low-volume production of ASICs,
wafer defect inspection and other applications.
E-Beam Technology Background
Almost
all commercially available e-beam systems today are derived from SEM
technology first developed in 1935. In the 1970s and 1980s, E-Beam
Direct Write (EBDW) was used to produce ICs for mainframe computers.
For the past 25 years, e-beam systems have been used to pattern photomasks for optical lithography.
Until now, all e-beam systems have faced the same challenge: they are
all based on single e-beam column technology and are all too slow to be used
for high volume manufacturing.
Multibeam
Corp. technology represents a new generation of e-beam
technology. Our proprietary multi-column e-beam technology is orders of
magnitude faster than single beam technology.
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