00c02021
 
 

   

TEL to Enter Maskless Litho Business  
  EE Times  

SEMICON West 2009  
  Moscone Center San Francisco
Jul 14-16, 2009
 

SPIE Photomask / BACUS  
  Monterey California
Sep 14-18, 2009
 
     

   

Technical Papers  
     
     

 

Industry Overview

High Volume IC Manufacturing

Low Volume IC Manufacturing

Complex Mask Writing

Wafer Defect Inspection

Photomask (Reticle) Inspection

Flat Panel Display (FPD) Inspection

CD SEM

Industry Overview 

 

The IC manufacturing industry is continuing to follow Moore’s law to ever smaller critical dimensions and feature sizes. The industry is producing chips with design rules at the 45nm node today and is pushing aggressively toward 32nm and 22nm feature sizes. For ICs at advanced nodes, however, the complexity and cost of optical lithography tools is extremely high, while limits in resolution are being approached.

 

Multibeam believes it can make significant contributions to the industry by enabling EBDW (E-Beam Direct Write) through its high-throughput, high-resolution, multi-column e-beam technology.

 

High Volume IC Manufacturing

Multibeam is working with a customer to address the high-volume manufacturing market. An e-beam maskless lithography system equipped with a Multibeam MBXÔ Engine, can pattern "critical layers" including contacts, vias, and gates, or can trim lines after Self-Aligned Double Patterning (SADP) to pattern poly and metal layers.

A crucial requirement in this application is very high throughput. Each column independently vector-scans the wafer surface, writing square and rectangular shapes with a limited range of aspect ratios specifically designed for contacts and vias or to trim lines at advanced process nodes.


Low Volume IC Manufacturing

The Multibeam ASIC Writer, or MEBICÔ, is designed for throughputs of 1-5 wafers per hour at advanced nodes with the capability of printing every layer of an IC directly from GDS-II or OASIS design files.  By eliminating the need for photomasks, advanced ASICs can be quickly produced in low volumes at much lower cost.

In addition to printing ASICs in general, the MEBIC
Ô is a cost-effective means of producing derivative IC designs. Multiple designs can be printed to a single wafer, speeding development and time to market.


Complex Mask Writing

To extend optical lithography, new mask technologies, such as Inverse Lithography Technology (ILT) and pixelated phase-shift masks, have been developed.  These technologies result in complex masks with numerous sub-resolution assist features (SRAFs).  But the complexity of these masks pushes writing time to extreme lengths, resulting in increasingly high mask set costs with each new generation.

A Multibeam Mask Writer can write with sufficient resolution and at sufficient speed to cost-effectively print these complex photomasks. The more complex the mask, the more a Multibeam Mask Writer will improve throughput, cost, and yield.


Wafer Defect Inspection

E-beam inspection tools are used in defect detection and yield enhancement in IC development and production, but the single-beam systems used today have inadequate throughput for full-wafer in-line inspection. In production, e-beam inspection tools currently sample only a small percentage of some wafers, and statistical methods are used to obtain defect information.

The high inspection rates enabled through Multibeam’s technology result in shorter inspection times (for faster process control feedback) and larger sample sizes (to catch less frequent process defects), making Multibeam’s MBX
Ô Engine a viable solution for in-line production inspection.


Photomask (Reticle) Inspection


In addition to complex mask writing, Multibeam MBXÔ Engines can be used to inspect photomasks for defects. A high resolution e-beam inspection system can find defects in 22nm complex masks that optical systems miss.

Flat Panel Display (FPD) Inspection


Multibeam has developed patent protected technology in high throughput flat panel display inspection.

CD SEM

The Multibeam MBXÔ Engine can be used as a high throughput scanning electron microscope (SEM) for critical dimension (CD) measurements. In this application, a target of interest is imaged with a raster scanned e-beam. CD SEM measurements have become increasingly important as the industry continues to move to ever smaller feature sizes.